Kidalov V. V., Dyadenchuk A. F. Substrate for the epitaxial growth of nitrides of group ІІІ:
Kidalov V. V., Dyadenchuk A. F.
Substrate for the epitaxial growth of nitrides of group ІІІ:
[Text]: monograph /
ISBN 978-83-66030-34-3
The monograph examines methods of preparation and analysis of substrates, as well as structural-crystallographic, morphological optical, mechanical and chemical
properties of substrates used for the epitaxial growth of GaN films. In addition to widely used substrates such as sapphire, silicon carbide, silicon, gallium arsenide,
gallium nitride and aluminum nitride, experimental studies and thorough analysis of substrates based on porous compounds have been carried out.
For research staff, graduate students and engineers who deal with the physicotechnological problems of semiconductors, especially nitride compounds of the third
group, as well as students of the physical faculties of the universities.
